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Nd:YVO4 Crystal

Short Description:

Nd:YVO4 (Neodymium-doped Yttrium Vanadate) is one of the best commercially available material for diode-pumped solid-state lasers, especially for lasers with low or middle power density. For example, Nd:YVO4 is a better choice than Nd:YAG for generating low-power beams in hand-held pointers or other compact lasers...


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Nd:YVO4 (Neodymium-doped Yttrium Vanadate) is one of the best commercially available material for diode-pumped solid-state lasers, especially for lasers with low or middle power density. For example, Nd:YVO4 is a better choice than Nd:YAG for generating low-power beams in hand-held pointers or other compact lasers. In these applications, Nd:YOV4 has some advantages over Nd:YAG, e.g. high absorption of pumped laser irradiation and large stimulated emission cross section.

Nd:YVO4 is a good choice for highly polarized output at 1342 nm, as the emission line is much stronger than those of its alternatives. Nd:YVO4 is capable of working with some nonlinear crystals with high NLO coefficient (LBO, BBO, KTP) to generate lights from near infrared to green, blue, or even UV.

Contact us for the best solution for your application of Nd:YVO4 crystals.

WISOPTIC Capabilities - Nd:YVO4

• Various options of Nd-doping ratio (0.1%~3.0at%)

• Various sizes (max diameter: 16×16 mm2; max length: 20 mm)

• Various coatings (AR, HR, HT)

• High processing accuracy

• Very competitive price, quick delivery

WISOPTIC Standard Specifications* - Nd:YVO4

Doping Ratio Nd%=0.2%~3.0at%
Orientation Tolerance +/- 0.5°
Aperture 1×1 mm2~16×16 mm2
Length 0.02 mm~20 mm
Dimension Tolerance (W±0.1mm)×(H±0.1mm)×(L+0.5/-0.1mm) (L≥2.5mm)
(W±0.1mm)×(H±0.1mm)×(L+0.2/-0.1mm) (L<2.5mm)
Flatness < λ/8 @ 632.8 nm (L≥2.5mm)
< λ/4 @ 632.8 nm (L<2.5mm)
Surface Quality < 20/10 [S/D]
Parallelism < 20”
Perpendicularity ≤ 5'
Chamfer ≤ 0.2 mm @ 45°
Transmitted Wavefront Distortion < λ/4 @ 632.8 nm
Clear Aperture > 90% central area
Coating AR @ 1064nm, R< 0.1% & HT @ 808nm, T>95%;
HR @ 1064nm, R>99.8% & HT@ 808nm, T>95%;
HR @ 1064nm, R>99.8%, HR @ 532 nm, R>99% & HT @ 808 nm, T>95%
Laser Damage Threshold > 700 MW/cm2 for 1064nm, 10ns, 10Hz (AR-coated)
* Products with special requirement upon request.
20170814140547
ns-yv041
Nd-YVO4-1

Advantages of Nd:YVO4 (compared with Nd:YAG)

• Wider pumping bandwidth around 808 nm (5 times that of Nd:YAG)

• Bigger stimulated emission cross-section at 1064nm (3 times that of Nd:YAG)

• Lower laser damage threshold and higher slope efficiency

• Different from Nd:YAG, Nd:YVO4 is uniaxial crystal which gives linearly polarized emission, avoiding redundant thermally induced birefringence. 

Laser Properties of Nd:YVO4 vs Nd:YAG

Crystal

Doping(atm%)

σ
(×10-19cm2)

α (cm-1)

τ (μs)

Lα (mm)

Pth (mW)

ηs (%)

Nd:YVO4
(a-cut)

1.0

25

31.2

90

0.32

30

52

2.0

25

72.4

50

0.14

78

48.6

Nd:YVO4
(c-cut)

1.1

7

9.2

90

231

45.5

Nd:YAG

0.85

6

7.1

230

1.41

115

38.6

 σ - stimulated emission cross-section, α - absorption coefficient, τ - fluorescent lifetime
Lα - absorption length, Pth - threshold power, ηs - pump quantum efficiency

Physical Properties - Nd:YVO4

Atomic density 1.26x1020 atoms/cm2 (Nd%=1.0%)
Crystal structure Zircon tetragonal, space group D4h-I4/amd
a=b=7.1193 Å, c=6.2892 Å
Density 4.22 g/cm2
Mohs hardness 4.6~5 (glass-like) 
Thermal expansion coefficient (300K) αa=4.43x10-6/K, αc=11.37x10-6/K
Thermal conductivity coefficient (300K) ||c: 5.23 W/(m·K); ⊥c: 5.10 W/(m·K)
Melting point 1820 ℃

Optical Properties - Nd:YVO4

Lasing wavelength 914 nm, 1064 nm, 1342 nm
Refractive indices positive uniaxial, no=na=nb ne=nc
no=1.9573, ne=2.1652 @ 1064 nm
no=1.9721, ne=2.1858 @ 808 nm
no=2.0210, ne=2.2560 @ 532 nm
Thermal optical coefficient (300K) dno/dT=8.5x10-6/K, dne/dT=3.0x10-6/K
Stimulated emission cross-section 25.0x10-19 cm2 @ 1064 nm
Fluorescent lifetime 90 μs (1.0at% Nd doped) @ 808 nm
Absorption coefficient 31.4 cm-1 @ 808 nm
Absorption length 0.32 mm @ 808 nm
Intrinsic loss 0.02 cm-1 @1064 nm
Gain bandwidth 0.96 nm (257 GHz) @ 1064 nm
Polarized laser emission parallel to optic axis (c-axis)
Diode pumped optical to optical efficiency > 60%

Polarized emission

Polarized


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